VS-HFA06TB120SPBF www.vishay.com vishay semiconductors revision: 26-feb-16 1 document number: 94039 for technical questions within your region: diodesamericas@vishay.com , diodesasia@vishay.com , diodeseurope@vishay.com this document is subject to change without notice. the products described herein and this document are subject to specific disclaimers, set forth at www.vishay.com/doc?91000 hexfred ? ultrafast soft recovery diode, 6 a features ? ultrafast and ultrasoft recovery ? very low i rrm and q rr ? specified at operating conditions ? meets msl level 1, per j-std-020, lf maximum peak of 260 c ? aec-q101 qualified ? material categorization: ? for definitions of compliance please see www.vishay.com/doc?99912 benefits ? reduced rfi and emi ? reduced power loss in diode and switching transistor ? higher frequency operation ? reduced snubbing ? reduced parts count description vs-hfa06tb120s is a state of the art ultrafast recovery diode. employing the latest in epitaxial construction and advanced processing techniques it features a superb combination of characteristics which result in performance which is unsurpassed by any rect ifier previously available. with basic ratings of 1200 v and 6 a continuous current, the vs-hfa06tb120s is especially well suited for use as the companion diode for igbts and mosfets. in addition to ultrafast recovery time, the hexfred ? product line features extremely low values of peak recovery current (i rrm ) and does not exhibit any tendency to snap-off during the t b portion of recovery. the hexfred features combine to offer designers a rectifier with lower noise and significantly lower switching losses in both the diode and the switching transistor. these hexfred advantages can help to significantly reduce snu bbing, component count and heatsink sizes. the hexfre d vs-hfa06tb120s is ideally suited for applications in power supplies and power conversion systems (such as in verters), motor drives, and many other similar applicatio ns where high speed, high efficiency is needed. product summary package to-263ab (d 2 pak) i f(av) 6 a v r 1200 v v f at i f 2.4 v t rr (typ.) 26 ns t j max. 150 c diode variation single die to-263ab (d 2 pak) ano d e 1 3 2 n/c absolute maximum ratings parameter symbol test conditions values units cathode to anode voltage v r 1200 v maximum continuous forward current i f t c = 100 c 6 a single pulse forward current i fsm 80 maximum repetitive forward current i frm 24 maximum power dissipation p d t c = 25 c 62.5 w t c = 100 c 25 operating junction and storage temperature range t j , t stg -55 to +150 c
VS-HFA06TB120SPBF www.vishay.com vishay semiconductors revision: 26-feb-16 2 document number: 94039 for technical questions within your region: diodesamericas@vishay.com , diodesasia@vishay.com , diodeseurope@vishay.com this document is subject to change without notice. the products described herein and this document are subject to specific disclaimers, set forth at www.vishay.com/doc?91000 electrical specifications (t j = 25 c unless otherwise specified) parameter symbol test conditions min. typ. max. units cathode to anode ? breakdown voltage v br i r = 100 a 1200 - - v maximum forward voltage v fm i f = 6.0 a - 2.7 3.0 i f = 12 a - 3.5 3.9 i f = 6.0 a, t j = 125 c - 2.4 2.8 maximum reverse ? leakage current i rm v r = v r rated - 0.26 5.0 a t j = 125 c, v r = 0.8 x v r rated - 110 500 junction capacitance c t v r = 200 v - 9.0 14 pf series inductance l s measured lead to lead 5 mm from package body - 8.0 - nh dynamic recovery characteristics (t j = 25 c unless otherwise specified) parameter symbol test conditions min. typ. max. units reverse recovery time t rr i f = 1.0 a, di f /dt = 200 a/s, v r = 30 v - 26 - ns t rr1 t j = 25 c i f = 6.0 a ? di f /dt = 200 a/s ? v r = 200 v -5380 t rr2 t j = 125 c - 87 130 peak recovery current i rrm1 t j = 25 c - 4.4 8.0 a i rrm2 t j = 125 c - 5.0 9.0 reverse recovery charge q rr1 t j = 25 c - 116 320 nc q rr2 t j = 125 c - 233 585 peak rate of recovery current ? during t b di (rec)m /dt1 t j = 25 c - 180 - a/s di (rec)m /dt2 t j = 125 c - 100 - thermal - mechanical specifications parameter symbol test conditions min. typ. max. units lead temperature t lead 0.063" from case (1.6 mm) for 10 s - - 300 c thermal resistance, ? junction to case r thjc --2.0 k/w thermal resistance, ? junction to ambient r thja typical socket mount - - 80 thermal resistance, ? case to heatsink r thcs mounting surface, flat, smooth and greased - 0.5 - weight -2.0- g -0.07- oz. marking device case style to-263ab (d 2 pak) hfa06tb120s
VS-HFA06TB120SPBF www.vishay.com vishay semiconductors revision: 26-feb-16 3 document number: 94039 for technical questions within your region: diodesamericas@vishay.com , diodesasia@vishay.com , diodeseurope@vishay.com this document is subject to change without notice. the products described herein and this document are subject to specific disclaimers, set forth at www.vishay.com/doc?91000 fig. 1 - typical forward voltage drop characteristics fig. 2 - typical reverse current vs. reverse voltage fig. 3 - typical junction ca pacitance vs. reverse voltage fig. 4 - maximum thermal impedance z thjc characteristics t j = 150 c t j = 125 c t j = 25 c i f - instantaneous forwar d current (a) v fm - forwar d voltage drop (v) 0123456 0.1 1 100 10 94039_01 i r - reverse current (a) v r - reverse voltage (v) 0 200 400 600 1000 1200 800 1400 0.01 0.1 1 10 100 1000 94039_02 t j = 25 c t j = 125 c t j = 100 c t j = 150 c c t - junction capacitance (pf) v r - reverse voltage (v) 1 10 100 1000 10 000 1 10 100 94039_03 t j = 25 c s ingle pul s e (thermal re s i s tance) d = 0.50 d = 0.20 d = 0.10 d = 0.05 d = 0.02 d = 0.01 0.01 0.1 1 10 0.00001 0.0001 0.001 0.01 0.1 1 10 t 1 - rectangular pulse duration (s) z thjc - thermal impe d ance (c/w) 100 94039_04 p dm t 2 t 1 note s : 1. duty factor d = t 1 /t 2 2. peak t j = p dm x z thjc + t c
VS-HFA06TB120SPBF www.vishay.com vishay semiconductors revision: 26-feb-16 4 document number: 94039 for technical questions within your region: diodesamericas@vishay.com , diodesasia@vishay.com , diodeseurope@vishay.com this document is subject to change without notice. the products described herein and this document are subject to specific disclaimers, set forth at www.vishay.com/doc?91000 fig. 5 - typical reverse recovery time vs. di f /dt fig. 6 - typical recovery current vs. di f /dt fig. 7 - typical stored charge vs. di f /dt fig. 8 - typical di (rec)m /dt vs. di f /dt v r = 200 v t j = 125 c t j = 25 c i f = 6 a i f = 4 a t rr (ns) d i f / d t (a/s) 100 1000 20 110 80 100 30 40 60 70 90 50 94039_05 i f = 6 a i f = 4 a v r = 200 v t j = 125 c t j = 25 c i rr (a) d i f / d t (a/s) 100 1000 0 25 20 5 10 15 94039_06 i f = 6 a i f = 4 a v r = 200 v t j = 125 c t j = 25 c q rr (nc) d i f / d t (a/s) 100 1000 0 1000 200 400 600 800 94039_07 v r = 200 v t j = 125 c t j = 25 c i f = 6 a i f = 4 a d i (rec)m / d t (a/s) d i f / d t (a/s) 100 1000 10 100 10 000 1000 94039_08
VS-HFA06TB120SPBF www.vishay.com vishay semiconductors revision: 26-feb-16 5 document number: 94039 for technical questions within your region: diodesamericas@vishay.com , diodesasia@vishay.com , diodeseurope@vishay.com this document is subject to change without notice. the products described herein and this document are subject to specific disclaimers, set forth at www.vishay.com/doc?91000 fig. 9 - reverse recovery parameter test circuit fig. 10 - reverse recovery waveform and definitions irfp250 d.u.t. l = 70 h v r = 200 v 0.01 g d s di f /dt adju s t q rr 0.5 i rrm di (rec)m /dt 0.75 i rrm i rrm t rr t b t a i f di f /dt 0 (1) (2) (3) (4) (5) (1) di f /dt - rate of change of current through zero cro ss ing (2) i rrm - peak rever s e recovery current (3) t rr - rever s e recovery time mea s ured from zero cro ss ing point of negative going i f to point where a line pa ss ing through 0.75 i rrm and 0.50 i rrm extrapolated to zero current. (4) q rr - area under curve defined by t rr and i rrm t rr x i rrm 2 q rr = (5) di (rec)m /dt - peak rate of change of current during t b portion of t rr
VS-HFA06TB120SPBF www.vishay.com vishay semiconductors revision: 26-feb-16 6 document number: 94039 for technical questions within your region: diodesamericas@vishay.com , diodesasia@vishay.com , diodeseurope@vishay.com this document is subject to change without notice. the products described herein and this document are subject to specific disclaimers, set forth at www.vishay.com/doc?91000 ordering information table links to related documents dimensions www.vishay.com/doc?95046 part marking information www.vishay.com/doc?95054 packaging information www.vishay.com/doc?95032 ordering information (example) preferred p/n quantity per tube minimum order quantity packaging description VS-HFA06TB120SPBF 50 1000 antistatic plastic tube vs-hfa06tb120strrp 800 800 13" diameter reel vs-hfa06tb120strlp 800 800 13" diameter reel 2 - hexfred ? family 1 - vishay semiconductors product 3 - process designator: a = electron irradiated 4 - current rating (06 = 6 a) 5 - package outline (tb = to-220, 2 leads) 6 - voltage rating (120 = 1200 v) 7 - s = d 2 pak - ? pbf = lead (pb)-free, for tube packaged 9 8 ? trl = tape and reel (left oriented) ? trr = tape and reel (right oriented) device code 5 1 3 2 4 6 7 8 9 vs- hf a 06 tb 120 s trl pbf - ? none = tube ? p = lead (pb)-free, for tape and reel packaged
outline dimensions www.vishay.com vishay semiconductors revision: 08-jul-15 1 document number: 95046 for technical questions within your region: diodesamericas@vishay.com , diodesasia@vishay.com , diodeseurope@vishay.com this document is subject to change without notice. the products described herein and this document are subject to specific disclaimers, set forth at www.vishay.com/doc?91000 d 2 pak dimensions in millimeters and inches notes (1) dimensioning and tolerancing per asme y14.5 m-1994 (2) dimension d and e do not include mold flas h. mold flash shall not exceed 0.127 mm (0 .005") per side. these dimensions are measu red at the outmost extremes of the plastic body (3) thermal pad contour optional with in dimension e, l1, d1 and e1 (4) dimension b1 and c1 a pply to base metal only (5) datum a and b to be dete rmined at datum plane h (6) controlling dimension: inch (7) outline conforms to jedec ? outline to-263ab symbol millimeters inches notes symbol millimeters inches notes min. max. min. max. min. max. min. max. a 4.06 4.83 0.160 0.190 d1 6.86 8.00 0.270 0.315 3 a1 0.00 0.254 0.000 0.010 e 9.65 10.67 0.380 0.420 2, 3 b 0.51 0.99 0.020 0.039 e1 7.90 8.80 0.311 0.346 3 b1 0.51 0.89 0.020 0.035 4 e 2.54 bsc 0.100 bsc b2 1.14 1.78 0.045 0.070 h 14.61 15.88 0.575 0.625 b3 1.14 1.73 0.045 0.068 4 l 1.78 2.79 0.070 0.110 c 0.38 0.74 0.015 0.029 l1 - 1.65 - 0.066 3 c1 0.38 0.58 0.015 0.023 4 l2 1.27 1.78 0.050 0.070 c2 1.14 1.65 0.045 0.065 l3 0.25 bsc 0.010 bsc d 8.51 9.65 0.335 0.380 2 l4 4.78 5.28 0.188 0.208 c b detail a c2 a a a 0.004 b m a lead tip (3) (3) view a - a (e) (d1) e1 b h a1 detail ?a? rotated 90 cw scale: 8 :1 l gauge plane 0 to 8 l3 l4 seating plane section b - b and c - c scale: none (4) (4) ( b , b 2) b 1, b 3 (c) c1 base metal plating conforms to jedec ? outline d 2 pak (smd-220) 13 2 d c a l2 e (2)(3) (2) 4 h bb 2 x b 2 x b 2 l1 0.010 a b m m (3) e 2 x pad layout min. 11.00 (0.43) min. 9.65 (0.3 8 ) min. 3. 8 1 (0.15) min. 2.32 (0.0 8 ) 17.90 (0.70) 15.00 (0.625) 2.64 (0.103) 2.41 (0.096)
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